| PART |
Description |
Maker |
| RA13H4047M |
RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Sem...
|
| RA55H3847M RA55H3847M-101 RA55H3847M11 |
RoHS Compliance , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA30H4047M RA30H4047M-01 RA30H4047M-E01 |
400-470MHz 30W 12.5V MOBILE RADIO 400 - 470MHz的功0W 12.5V移动通信
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RA03M3540MD RA03M3540MD10 RA03M3540MD-101 |
RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
350 MHz - 400 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
| RA30H4047M1-101 RA30H4047M108 |
400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA55H4047M RA55H4047M10 |
400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA45H4047M10 |
400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA60H4047M108 RA60H4047M1 RA60H4047M1-101 |
RF MOSFET MODULE 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| VSS |
rohs compliance
|
Surge Components
|
| MEA |
rohs compliance
|
Surge Components
|
| G2PM109RNM-LF |
Compliance with ROHS requirements
|
Bothhand USA, LP.
|
